2N6517 n pn ep i t a x ial p la n ar t r a n s i s t or descrip t i on t he 2N6517 is des i g ned f o r gen e r al pu r pose applica t ions r e q ui r i n g h i g h b r e a k do w n v ol t a g es. features ? hi g h collec t o r - e m i tt e r b r e a k do w n v ol t a g e . ? low collec t o r- e m i t t er sa t u r a t i on v ol t a g e . ? t he 2N6517 is co m pl e m en t a r y t o 2n652 0 . absolute maximum ratings ? maximum temperatures storage temperature ........................................................................................................... - 55~+150 c junction temperature ................................................................................................. +150 c maximum ? maximum power dissipation total power dissipation (ta=25 c)............................................................................................. 625 mw ? maximum voltages and currents (ta=25 c) vcbo collector to base voltage................................................................................................. ... 350 v vceo collector to emitter voltage.............................................................................................. ... 350 v vebo emitter to base voltage................................................................................................... ........ 5 v ic collector current .......................................................................................................... ......... 500 ma ib base current ............................................................................................................... .......... 250 ma characteristics (ta=25 c) symbol min. typ. max. unit test conditions bvcbo 350 - - v ic=100ua, ie=0 bvceo 350 - - v ic=1ma, ib=0 bvebo 5 - - v ie=10ua, ic=0 icbo - - 50 na vcb=250v, ie=0 iebo - - 50 na veb=5v, ic=0 vce(sat)1 - - 0.30 v ic=10ma, ib=1ma vce(sat)2 - - 0.35 v ic=20ma, ib=2ma vce(sat)3 - - 0.50 v ic=30ma, ib=3ma vce(sat)4 - - 1.00 v ic=50ma, ib=5ma vbe(on) - - 2 v ic=100ma, vce=10v vbe(sat)1 - - 0.75 v ic=10ma, ib=1ma vbe(sat)2 - - 0.85 v ic=20ma, ib=2ma vbe(sat)3 - - 0.90 v ic=30ma, ib=3ma hfe1 20 - - vce=10v, ic=1ma hfe2 30 - - vce=10v, ic=10m hfe3 30 - 200 vce=10v, ic=30ma hfe4 20 - 200 vce=10v, ic=50ma hfe5 15 - - vce=10v, ic=100ma ft 40 - 200 mhz ic=10ma, vce=20v, f=20mhz cob - - 6 pf vcb=20v, f=1mhz, ie=0 tiger electronic co.,ltd tiger electronic co.,ltd
characteristics curve current gain & collector current 1 10 100 1000 0.1 1 10 100 1000 collector current (ma) hfe h f e @ v c e = 1 0 saturation voltage & collector current 10 100 1000 10000 100000 0.1 1 10 100 1000 collector current (ma) saturation voltage (mv) v be(sat) @ i c =10i b v ce(sat) @ i c =10i b on voltage & collector current 100 1000 10000 1 10 100 1000 collector current (ma) on voltage (mv) v be(on) @ v ce =10v capacitance & reverse-biased voltage 1 10 0.1 1 10 100 reverse-biased voltage (v) capacitance (pf) cob cutoff frequency & collector current 10 100 1 10 100 collector current (ma) cutoff frequency (mhz) vce=20v safe operating area 1 10 100 1000 10000 1 10 100 1000 forward voltage-v ce (v) collector current-i c (ma) pt=1ms pt=100ms pt=1s tiger electronic co.,ltd tiger electronic co.,ltd
to-92 dimension *:typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1704 0.1902 4.33 4.83 g 0.0142 0.0220 0.36 0.56 b 0.1704 0.1902 4.33 4.83 h - * 0.1000 - * 2.54 c 0.5000 - 12.70 - i - * 0.0500 - * 1.27 d 0.0142 0.0220 0.36 0.56 1 - * 5 - * 5 e- * 0.0500 - * 1.27 2 - * 2 - * 2 f 0.1323 0.1480 3.36 3.76 3 - * 2 - * 2 31 a d b c i 1 e f 2 3 g h 2 3-lead to-92 plastic package tgs package code : a tiger electronic co.,ltd tiger electronic co.,ltd
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